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DMP2018LFK
Electrical Characteristics @ T A = 25°C unless otherwise stated
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
-
-
-
-
-
-
-1
±2
V
μ A
μ A
V GS = 0V, I D = -10mA
V DS = -20V, V GS = 0V
V GS = ±10V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
-0.45
-
-1.2
V
V DS = -10V, I D = -200 μ A
-
10
16
V GS = -4.5V, I D = -3.6A
Static Drain-Source On-Resistance
R DS (ON)
-
-
12
13.6
20
25
m Ω
V GS = -2.5V, I D = -3.6A
V GS = -2.0V, I D = -1.8A
-
20
-
V GS = -1.5V, I D = -1A
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
10
-
17
0.7
-
1.2
S
V
V DS = -10V, I D = -3.6A
V GS = 0V, I S = -3.6A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = -10V)
Total Gate Charge (V GS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
-
4748
833
339
6.2
113
53
7.1
8.5
22.8
29.8
240.8
100.6
-
-
-
-
-
-
-
-
-
-
-
-
pF
Ω
nC
ns
V DS = -10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V DS = -16V, I D = -7.2A
V DD = -10V, V GS = -4.5V,
R G = 4.7 ? , I D = -3.6A
Notes:
6. UIS in production with L = 0.5mH, TJ = 25°C
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
30
V GS = -10V
V GS = -4.5V
30
25
V GS = -2.5V
25
V DS = -5V
V GS = -2.0V
20
15
V GS = -1.5V
20
15
10
10
T A = 150°C
T A = 125°C
5
5
T A = 85°C
T A = 25°C
T A = -55°C
0
0
0.5 1 1.5
2
0
0
0.5 1 1.5 2 2.5
3
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
-V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMP2018LFK
Document number: DS35357 Rev. 5 - 2
3 of 7
www.diodes.com
March 2012
? Diodes Incorporated
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